050-7406 rev e 12-2006 apt35gp120b APT35GP120BG * g denotes rohs compliant, pb free terminal finish. the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 800v, 14a ? low gate charge ? 50 khz operation @ 800v, 25a ? ultrafast tail current shutoff ? rbsoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics min typ max 1200 3 4.5 6 3.3 3.9 3 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 35a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 35a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l apt35gp120b(g) 1200 20 30 96 46 140 140a @ 960v 543 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. to-247 g c e g c e power mos 7 ? igbt microsemi website - http://www.microsemi.com
050-7406 rev e 12-2006 apt35gp120b(g) dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 35a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 35a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 35a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 3240 248 31 7.5 150 21 62 140 16 20 94 40 750 1305 680 16 20 147 75 750 2132 1744 unit pf v nc a ns j ns j unit c/w gm min typ max .23 n/a 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7406 rev e 12-2006 typical performance curves apt35gp120b(g) v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ge = 15v. 250s pulse test <0.5 % duty cycle t c =25c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = 125c t j = -55c i c = 35a t j = 25c t c =125c t c =25c t c =125c v ce = 960v v ce = 600v v ce = 240v 250s pulse test <0.5 % duty cycle i c= 17.5a i c= 35a i c= 70a i c= 70a i c= 17.5a i c= 35a 80 70 60 50 40 30 20 10 0 120 100 80 60 40 20 0 6 5 4 3 2 1 0 1.2 1.15 1.1 1.05 1.0 0.95 0.90 0.85 0.8 01 23 45 012 3 4 5 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 80 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 140 120 100 80 60 40 20 0
050-7406 rev e 12-2006 apt35gp120b(g) t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ge = 10v,t j =125c v ge = 15v v ge = 10v v ge =15v,t j =125c t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ge =15v,t j =25c v ge = 10v,t j =25c 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 0 10 20 30 40 50 0 25 50 75 100 125 180 160 140 120 100 80 60 40 20 0 100 90 80 70 60 50 40 30 20 10 0 4000 3000 2000 1000 0 5000 4000 3000 2000 1000 0 t j = 125c,v ge = 15v t j = 25c,v ge = 15v t j = 125c,v ge = 10v e on2 35a e on2 17.5a e off 17.5a e off 17.5a e off 35a e off 70a e on2 35a e on2 70a e on2 17.5a t j = 25 or 125c,v ge = 10v t j = 25 or125c,v ge = 10v e on2 70a e off 70a e off 35a t j = 25c,v ge = 10v v ce = 600v r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v v ge = +15v r g = 5 ? switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 600v v ge = +15v t j = 125 c v ce = 600v r g = 5 ? v ce = 600v r g = 5 ? v ce = 600v t j = 25c, t j =125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 600v 35 30 25 20 15 10 5 0 140 120 100 80 60 40 20 0 5000 4000 3000 2000 1000 0 8000 7000 6000 5000 4000 3000 2000 1000 0
050-7406 rev e 12-2006 typical performance curves apt35gp120b(g) note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 5,000 1,000 500 100 50 10 160 140 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, reverse bias safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 c res c ies c oes figure 19b, transient thermal impedance model 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current 180 100 50 10 7 10 20 30 40 50 60 70 t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 5 ? 0.0896 0.140 0.0108 0.228 dissipated power (watts) t j ( c) t c ( c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext
050-7406 rev e 12-2006 apt35gp120b(g) t0-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit figure 23, turn-off switching waveforms and definitions figure 22, turn-on switching waveforms and definitions t j = 125 c gate voltage collector voltage collector current 0 10% t f 90% 90% t d(off) switching energy collector voltage collector current t j = 125 c gate voltage switching energy 10% t r 90% 5% 10% 5 % t d(on) microsemi?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rig hts reserved. i c a d.u.t. apt30df120 v ce figure 21, inductive switching test circuit v cc e1 sac: tin, silver, copper
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